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  4. Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band
 
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2020
Conference Paper
Title

Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band

Abstract
The paper investigates experimentally the effect of harmonic terminations on AlGaN/GaN power amplifiers (PA) performance at K-/Ka-band. Two technologies are compared,a 0.25 µm and 0.1 µm process. In both cases, a harmonic termination increases the achievable output power by about 10 % at the expense of bandwidth, whereas the efficiency is improved only in the first one.
Author(s)
Samis, Stanislav
Institut für Hochfrequenztechnik, Hamburg
Friesicke, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lozar, Roger  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Maier, Thomas  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Jacob, Arne
Institut für Hochfrequenztechnik, Hamburg
Mainwork
23rd International Microwave and Radar Conference, MIKON 2020  
Conference
International Microwave and Radar Conference (MIKON) 2020  
DOI
10.23919/MIKON48703.2020.9253908
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride

  • high power amplifier

  • K-band

  • Ka-Band

  • MMICs

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